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* =g = ----= -A == -r -an AMP company SE z--z Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System PHI 920-45 Matching Absbiute Maximum Ratings at 25C Parameter Collector-EmitterVoltage 1 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation I Symbol VCEO 1 V,,, VEBO `c P, Y T, T ST0 e.lc I Rating 20 1 65 3.0 5.5 100 200 -65 to +200 1.3 1 Units V ) V V A w ) "C "C "CNV UVLESS C-HE?WISE NOTED, TOLERANCfS ARE ) JunctionTemperature StorageTemperature Thermal Resistance 1 :1.52* INC-iES :MILLIM:TZRS .050'.002 -! I 05) i.005' Z.!3t4M> Electrical Characteristics Parameter Power Gain CollectorEfficiency Input Return Loss Load Mismatch Tolerance at 25C Symbol GP % Min 8 40 10 - Max 3:l Units dB % dB - Test Conditions V,,=25 V. I,,=200 mA, P&:45 V,,=25 V, I,,=200 mA, PO*45 W, F=l930,1990 MHz W, F-l 930,199O MHz RL VSWR-T V,,=25 V, I,,=200 mA, PO,,=45 W, F=1930,1990 MHz V,,=25 V, I,,=200 mA, Pou?=45 W, F=l930,1990 MHz Broadband Test Fixture Impedances F(MHz) 1960 1930 2.7 - j5.4 ZFoa 2.8 - j5.5 5.0 - jl.3 zoFty) 4.8-11.1 . $YEqqQq$ 1990 2.6 - j5.3 5.2 - jl.5 - -- Wireless Bipolar Power Transistor, 33W PH1920-45 Vl .oo RF Test Fixture CARBON RESISTOR 5.1 w 0.25 w. \ BANANA JACK5 3 PLACES DIODE 35417AKK BAND POLARITY AT BO-f'TM INDUCfOWRESI5TOft 12 TURNS r-s *m .Y, NI 3 77 \r r-r-++ UALLORY TTSBWSBA PC BOARDS ROGERS 0.025" 6010.5 Er-10.5 GROUND SHIM 2 PLACES 2 PLACES I l&l-J- CHIP 4.7uF CAPACITOR, 35 V. SNA CONNECTOR, 2052-5636-02 I HEATSINK. ALWNW 73050255-02 \ I J CHIP CAPACITORS, ATClBBA I 33pF 4 PLACES CARRIER BRASS 73058257-12 L- TRANSISTOR CLMP, NORYL 74250125-03 CARRIER, COPPER 73056256-02 Test Fixture PC Board Dimensions 2.0w - 0.970" 0.683" |
Price & Availability of PH1920-45 |
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