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  Datasheet File OCR Text:
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Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz
Features
NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System
PHI 920-45
Matching
Absbiute Maximum Ratings at 25C
Parameter Collector-EmitterVoltage 1 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation
I
Symbol VCEO 1 V,,, VEBO `c P, Y T, T ST0 e.lc
I
Rating 20 1 65 3.0 5.5 100 200 -65 to +200 1.3
1
Units V ) V V A w ) "C "C "CNV
UVLESS C-HE?WISE NOTED, TOLERANCfS ARE
)
JunctionTemperature StorageTemperature Thermal Resistance
1
:1.52* INC-iES :MILLIM:TZRS
.050'.002 -! I
05) i.005' Z.!3t4M>
Electrical Characteristics
Parameter Power Gain CollectorEfficiency Input Return Loss Load Mismatch Tolerance
at 25C
Symbol GP
%
Min 8 40 10 -
Max 3:l
Units dB % dB -
Test Conditions V,,=25 V. I,,=200 mA, P&:45 V,,=25 V, I,,=200 mA, PO*45 W, F=l930,1990 MHz W, F-l 930,199O MHz
RL VSWR-T
V,,=25 V, I,,=200 mA, PO,,=45 W, F=1930,1990 MHz V,,=25 V, I,,=200 mA, Pou?=45 W, F=l930,1990 MHz
Broadband Test Fixture Impedances
F(MHz) 1960 1930 2.7 - j5.4 ZFoa 2.8 - j5.5 5.0 - jl.3 zoFty) 4.8-11.1 . $YEqqQq$
1990
2.6 - j5.3
5.2 - jl.5
-
--
Wireless Bipolar Power Transistor,
33W
PH1920-45
Vl .oo
RF Test Fixture
CARBON RESISTOR 5.1 w 0.25 w. \ BANANA JACK5 3 PLACES
DIODE
35417AKK BAND
POLARITY AT BO-f'TM
INDUCfOWRESI5TOft 12 TURNS r-s *m .Y, NI 3 77 \r r-r-++
UALLORY TTSBWSBA PC BOARDS ROGERS 0.025" 6010.5 Er-10.5 GROUND SHIM 2 PLACES
2 PLACES
I
l&l-J-
CHIP 4.7uF
CAPACITOR, 35 V.
SNA CONNECTOR, 2052-5636-02
I
HEATSINK. ALWNW 73050255-02
\ I
J
CHIP
CAPACITORS, ATClBBA
I
33pF
4 PLACES
CARRIER BRASS 73058257-12
L-
TRANSISTOR
CLMP, NORYL 74250125-03
CARRIER,
COPPER 73056256-02
Test Fixture PC Board Dimensions
2.0w
-
0.970"
0.683"


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